Formation of BiFeO 3 from a Binary Oxide Superlattice Grown by Atomic Layer Deposition
نویسندگان
چکیده
منابع مشابه
(Sn,Al)Ox Films Grown by Atomic Layer Deposition
Tin oxide (SnO2) is a transparent semiconductor with a wide band gap and electrical resistivity as low as 2 10 4 Ω 3 cm and high infrared reflectivity, over 90%. 4 These properties are achieved using n-type doping by substituting fluorine for about 1% of the oxygen. The low electrical resistance and optical transparency in SnO2 are widely used in applications such as solar cells, displays, touc...
متن کاملAtomic Layer Deposition of Aluminum Oxide
I Acknowledgements II Dedication III List of Figures V
متن کاملUltrathin oxide films by atomic layer deposition on graphene.
In this paper, a method is presented to create and characterize mechanically robust, free-standing, ultrathin, oxide films with controlled, nanometer-scale thickness using atomic layer deposition (ALD) on graphene. Aluminum oxide films were deposited onto suspended graphene membranes using ALD. Subsequent etching of the graphene left pure aluminum oxide films only a few atoms in thickness. A pr...
متن کاملEnhanced visible photoluminescence from ultrathin ZnO films grown on Si-nanowires by atomic layer deposition.
Bright room temperature visible emission is obtained in heterostructures consisting of approximately 3.5 nm thick ZnO ultrathin films grown on Si-nanowires produced by means of self-masking dry etching in hydrogen-containing plasma. The ZnO films were deposited on Si-nanowires by using atomic layer deposition (ALD) under an ambient temperature of 25 degrees C. The orders of magnitude enhancemen...
متن کاملSkin layer of BiFeO(3) single crystals.
A surface layer ("skin") different from the bulk was found in single crystals of BiFeO(3). Impedance analysis and grazing incidence x-ray diffraction reveal a phase transition at T(*)∼275±5 °C that is confined within the surface of BiFeO(3). X-ray photoelectron spectroscopy and refraction-corrected x-ray diffraction as a function of incidence angle and photon wavelength indicate a reduced elect...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ChemPhysChem
سال: 2017
ISSN: 1439-4235,1439-7641
DOI: 10.1002/cphc.201700407